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Ordering number : ENN6620
5LP01N
P-Channel Silicon MOSFET
5LP01N
Ultrahigh-Speed Switching Applications
Features
* * *
Package Dimensions
unit : mm 2178
[5LP01N]
5.0 4.0 4.0
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.45 0.5 0.6 2.0 0.45 0.44 14.0
1
2
3
5.0
1 : Source 2 : Drain 3 : Gate
1.3
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1%
1.3
SANYO : NP
Conditions
Ratings -50 10 --0.07 --0.28 0.4 150 --55 to +150
Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=--1mA, VGS=0 VDS=-50V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=-100A Ratings min --50 10 10 -0.4 --1.4 typ max Unit V A A V
Marking : XB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91400 TS IM TA-1954 No.6620-1/4
5LP01N
Continued from preceding page.
Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, ID=--40mA ID=--40mA, VGS=--4V ID=--20mA, VGS=--2.5V ID=--5mA, VGS=-1.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=--10V, ID=-70mA VDS=--10V, VGS=--10V, ID=-70mA VDS=--10V, VGS=--10V, ID=-70mA IS=--70mA, VGS=0 Ratings min 70 typ 100 18 20 30 7.4 4.2 1.3 20 35 160 150 1.40 0.16 0.23 0.85 1.2 23 28 60 max Unit mS pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
0V --4V VIN VIN VDD= --25V ID= --40mA RL=625
PW=10s D.C.1%
D G
VOUT
5LP01N P.G 50
S
--0.07
ID -- VDS
0V
V
--0.14
ID -- VGS
Ta= -25C
--6 .
0V
--0.06
--2
--3
.5
.0
V
--0.12
VDS= --10V
25C
--4 .
Drain Current, ID -- A
.5V
--2.0V
Drain Current, ID -- A
--0.05
--3
--0.10
--0.03
--0.06
--0.02
VGS= --1.5V
--0.04
--0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
--0.02 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Drain-to-Source Voltage, VDS -- V
40
IT00090 100
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
75
--0.04
--0.08
C
IT00091
RDS(on) -- ID
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) --
35 7
VGS= --4V
30
5
25
3
ID=20mA
20
40mA
Ta=75C
2
25C --25C
15
10 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
10 --0.01
2
3
5
7
--0.1
2
3
Gate-to-Source Voltage, VGS -- V
IT00092
Drain Current, ID -- A
IT00093
No.6620-2/4
5LP01N
1000 7
RDS(on) -- ID
VGS= --2.5V
100
RDS(on) -- ID
VGS= --1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
Static Drain-to-Source On-State Resistance, RDS(on) --
7
5
100 7 5 3 2
3
Ta=75C 25C --25C
25C Ta=75C --25C
2 3 5 7 --0.1 2 3
2
10 --0.01
10 --0.001
2
3
5
7
--0.01
2
3
Drain Current, ID -- A
40
IT00094 1.0
Drain Current, ID -- A
RDS(on) -- Ta
yfs -- ID
IT00095
Forward Transfer Admittance, yfs -- S
7 5 3 2
VDS= --10V
Static Drain-to-Source On-State Resistance, RDS(on) --
35
30
25
20
m -20 V =A, ID 0m --4 = ID
V A,
-2. =GS
5V
-4. =GS
0V
0.1 7 5 3 2
5C Ta= --2
75C
25C
15
10 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
3 2
0.01 --0.01
2
3
5
7
--0.1
2
3
IT00096 1000
IF -- VSD
VGS=0
Drain Current, ID -- A
IT00097
SW Time -- ID
7
VDD= --25V VGS = --4V tf td(off)
Switching Time, SW Time -- ns
5 3 2
Forward Current, IF -- A
--0.1 7 5
100 7 5 3 2
3
tr td(on)
25C
--25C
2
Ta=7 5C
--0.01 --0.5
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2 IT00098
10 --0.01
2
3
5
7
Diode Forward Voltage, VSD -- V
100 7 5 3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Drain Current, ID -- A
--10 --9
--0.1 IT00099
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
VDS= --10V ID= --70mA
--8 --7 --6 --5 --4 --3 --2 --1 0
Ciss, Coss, Crss -- pF
10 7 5 3 2 1.0 7 5 3 2 0.1 0 --5 --10 --15 --20 --25 --30
Ciss Coss
Crss
--35
--40
--45
--50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, VDS -- V
IT00100
Total Gate Charge, Qg -- nC
IT00101
No.6620-3/4
5LP01N
0.5
PD -- Ta
Allowable Power Dissipation, PD -- W
0.4
0.3
0.2
0.1
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT02383
Note on usage : Since the 5LP01N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice.
PS No.6620-4/4

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